Memristive crossbar arrays for storage and computing applications
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
Electrically induced resistive switching in metal insulator-metal structures is a subject of
increasing scientific interest because it is one of the alternatives that satisfies current …
increasing scientific interest because it is one of the alternatives that satisfies current …
Cycling-Induced Capacity Increase of Bulk and Artificially Layered LiTaO3 Anodes in Lithium-Ion Batteries
Tantalum-based oxide electrodes have recently drawn much attention as promising anode
materials owing to their hybrid Li+ storage mechanism. However, the utilization of LiTaO3 …
materials owing to their hybrid Li+ storage mechanism. However, the utilization of LiTaO3 …
Compliance-free, digital SET and analog RESET synaptic characteristics of sub-tantalum oxide based neuromorphic device
A two terminal semiconducting device like a memristor is indispensable to emulate the
function of synapse in the working memory. The analog switching characteristics of …
function of synapse in the working memory. The analog switching characteristics of …
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
We demonstrate a high-performance selection device by utilizing the concept of crested
oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO …
oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO …
Scaling effect on silicon nitride memristor with highly doped Si substrate
A feasible approach is reported to reduce the switching current and increase the nonlinearity
in a complementary metal–oxide–semiconductor (CMOS)‐compatible Ti/SiNx/p+‐Si …
in a complementary metal–oxide–semiconductor (CMOS)‐compatible Ti/SiNx/p+‐Si …
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
TaO x-based memristors have recently demonstrated both subnanosecond resistance
switching speeds and very high write/erase switching endurance. Here we show that the …
switching speeds and very high write/erase switching endurance. Here we show that the …
Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation
M Yu, Y Cai, Z Wang, Y Fang, Y Liu, Z Yu, Y Pan… - Scientific reports, 2016 - nature.com
Abstract A novel vertical 3D RRAM structure with greatly improved reliability behavior is
proposed and experimentally demonstrated through basically compatible process featuring …
proposed and experimentally demonstrated through basically compatible process featuring …
Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses
In this work, ZnSnO-based resistive switching (RS) devices were fabricated with different top
electrodes (TEs) to investigate the RS and synaptic characteristics for neuromorphic …
electrodes (TEs) to investigate the RS and synaptic characteristics for neuromorphic …