Radiation damage effects on zinc oxide (ZnO) based semiconductor devices–a review

R Rasmidi, M Duinong, FP Chee - Radiation Physics and Chemistry, 2021 - Elsevier
In space, semiconductor devices are vulnerable to various effect of high energy radiation,
causing single event upsets (SEUs), damaging or altering the lattice structure of the …

Proton Ion Irradiation on As40Se50Sb10 Thin Films: Fluence-Dependent Tuning of Linear–Nonlinear Optical Properties for Photonic Applications

D Sahoo, S Sahoo, D Alagarasan… - ACS Applied …, 2022 - ACS Publications
The present work is focused on the impact of proton irradiation (30 keV) on the structural,
optical, and morphological properties of thermally evaporated As40Se50Sb10 thin films. The …

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

P Priyadarshini, D Alagarasan… - ACS Applied Optical …, 2022 - ACS Publications
This study investigates the effects of 30 keV proton ion irradiation on the structural,
morphological, and linear–nonlinear optoelectronic properties of Sb40Se20S40 thin films …

Modifications in the structural, morphological, optical properties of Ag45Se40Te15 thin films by proton ion irradiation for optoelectronics and nonlinear applications

S Das, S Senapati, D Alagarasan, R Ganesan… - Ceramics …, 2023 - Elsevier
This current work reports the 30 keV proton ion irradiation induced structural, morphological,
and optical properties change in Ag 45 Se 40 Te 15 films at different fluences. The thin films …

Impact of irradiation doses on the structural, morphological, and linear–nonlinear optical properties of Ge10Sb25Se65 thin films for optoelectronic applications

D Sahoo, D Alagarasan, R Ganesan… - … Physical Journal Plus, 2022 - epjplus.epj.org
In this study, we have reported proton irradiation (30 keV) induced various properties
change in the thermally evaporated Ge10Sb25Se65 films. The bulk sample was prepared …

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

P Priyadarshini, A Parida, D Alagarasan… - Journal of Applied …, 2023 - pubs.aip.org
The current research depicts the laser irradiation-induced effect on the optoelectrical and
structural properties of thermally evaporated Bi 15 In 20 Se 65 thin films with different …

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi 5 In 30 Se 65 thin films for nonlinear optical devices

P Priyadarshini, S Das, D Alagarasan, R Ganesan… - RSC …, 2022 - pubs.rsc.org
This paper reports the effects of ion irradiation on the structural, linear, and nonlinear optical
properties of thermally evaporated Bi5In30Se65 thin films. The prepared films were …

The impact of proton ion irradiation on Se70Te20In10 thin films: Linear and non-linear optical properties for photonic applications

TK Matabana, CB Tabi, M Madhuku, DP Sebuso… - Physica B: Condensed …, 2025 - Elsevier
The examination of the linear and non-linear optical features was conducted on amorphous
ternary Se 70 Te 20 In 10 thin films, which were exposed to proton irradiation energy of 3 …

Effect of film thickness on structural and optical properties of sol-gel spin coated aluminum doped zinc oxide (Al: ZnO) thin films

RK Pandey, K Ghosh, S Mishra, JP Bange… - Materials Research …, 2018 - iopscience.iop.org
Abstract Al doped ZnO (Al: ZnO, 1 at%) thin films of varying thickness are deposited on
silicon (Si) substrates using sol-gel spin coating method. The thermally annealed films are …

The optical and electrical properties of ZnO: Al thin films deposited at low temperatures by RF magnetron sputtering

P Tang, B Li, L Feng - Ceramics International, 2018 - Elsevier
Abstract Several ZnO: Al thin films have been successfully deposited on glass substrates at
different substrate temperatures by RF (radio frequency) magnetron sputtering method …