Effect of channel width variation on electrical characteristics of double lateral gate Junctionless transistors; a numerical study
In this paper, the effect of channel width variation on performance of double lateral gate
junctionless transistors in the depletion and accumulation regimes is investigated. The …
junctionless transistors in the depletion and accumulation regimes is investigated. The …
Field-effect BJT: an adaptive and multifunctional nanoscale transistor
F Raissi, M Amirmazlaghani, A Rajabi - Applied Nanoscience, 2022 - Springer
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor
due to its scalability down to the nanometer range. On the other hand, bipolar junction …
due to its scalability down to the nanometer range. On the other hand, bipolar junction …
Feasibility of Digital Circuit Design Based on Nanoscale Field-Effect Bipolar Junction Transistor
A Shokri, M Amirmazlaghani - Journal of Electrical and Computer …, 2023 - jecei.sru.ac.ir
Background and Objectives: The Field-effect Bipolar Junction Transistor (FEBJT) is a device
with a bipolar junction transistor (BJT) characteristics except that it is designed with standard …
with a bipolar junction transistor (BJT) characteristics except that it is designed with standard …