Influence of emitter side design on the unintentional turn-on of 10kV+ SiC n-IGBTs

[PDF] worktribe.com

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement

I Almpanis, M Antoniou, P Evans… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon
counterparts in power conversion applications due to their performance superiority. SiC …
被引用次数：3 相关文章 所有 5 个版本
[PDF] scientific.net

10kV+ rated SiC n-IGBTs: Novel collector-side design approach breaking the trade-off between dV/dt and device efficiency

I Almpanis, P Evans, M Antoniou… - Key Engineering …, 2023 - Trans Tech Publ
10kV+ rated 4H-Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the
potential to become the devices of choice in future Medium Voltage (MV) and High Voltage …
被引用次数：2 相关文章 所有 3 个版本
[PDF] worktribe.com

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances

I Almpanis, P Evans, K Li… - 2023 IEEE Design …, 2023 - ieeexplore.ieee.org
This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and
current dependent capacitances to simulate its switching characteristics, and a voltage …
相关文章 所有 3 个版本