Molecular segregation observed in a concentrated alcohol–water solution

S Dixit, J Crain, WCK Poon, JL Finney, AK Soper - Nature, 2002 - nature.com
When a simple alcohol such as methanol or ethanol is mixed with water,, the entropy of the
system increases far less than expected for an ideal solution of randomly mixed molecules …

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si

PM Voyles, DA Muller, JL Grazul, PH Citrin… - Nature, 2002 - nature.com
As silicon-based transistors in integrated circuits grow smaller, the concentration of charge
carriers generated by the introduction of impurity dopant atoms must steadily increase …

Advances in ultrashallow doping of silicon

C Zhang, S Chang, Y Dan - Advances in Physics: X, 2021 - Taylor & Francis
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

Superconductivity in Doped Semiconductors: The Case of the Clathrates

D Connétable, V Timoshevskii, B Masenelli, J Beille… - Physical review …, 2003 - APS
We present a joint experimental and theoretical study of the superconductivity in doped
silicon clathrates. The critical temperature in B a 8@ S i-46 is shown to strongly decrease …

Realization of atomically controlled dopant devices in silicon

FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh… - Small, 2007 - Wiley Online Library
To date, the only tools that have allowed the manipulation of matter at the atomic level are
scanning probe microscopes.[1] However, atomic manipulation in semiconductors is not …

Effects of phosphorus doping and postgrowth laser annealing on the structural, electrical, and chemical properties of phosphorus-doped silicon films

M Lee, HY Ryu, E Ko, DH Ko - ACS Applied Electronic Materials, 2019 - ACS Publications
Phosphorus has low solubility in silicon, but nonequilibrium incorporation of phosphorus
exhibits unusual high strain and low contact resistance for advanced Si-based metal-oxide …

Ultradense phosphorous delta layers grown into silicon from molecular precursors

TC Shen, JY Ji, MA Zudov, RR Du, JS Kline… - Applied Physics …, 2002 - pubs.aip.org
Phosphorous δ-doping layers were fabricated in silicon by PH 3 deposition at room
temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope …

Low resistivity, super-saturation phosphorus-in-silicon monolayer doping

SR McKibbin, CM Polley, G Scappucci… - Applied Physics …, 2014 - pubs.aip.org
We develop a super-saturation technique to extend the previously established doping
density limit for ultra-high vacuum monolayer doping of silicon with phosphorus. Through an …

Atomic control of the electronic structure at complex oxide heterointerfaces

HY Hwang - MRS bulletin, 2006 - Springer
The following article is based on the Outstanding Young Investigator Award presentation
given by Harold Y. Hwang of the University of Tokyo on March 29, 2005, at the Materials …

Setup for optimized grazing incidence x-ray absorption experiments on thin films on substrates

C Maurizio, M Rovezzi, F Bardelli, HG Pais… - Review of Scientific …, 2009 - pubs.aip.org
We present a state-of-the-art experimental apparatus and a proper setup to perform x-ray
absorption spectroscopy (XAS) experiments in grazing incidence mode. This geometry is …