Contactless photoconductance measurements are commonly used to extract the emitter
saturation current density (Joe) for crystalline silicon samples containing an emitter on the …

N‐type back‐contact back‐junction solar cells were processed with the use of industrially
relevant structuring technologies such as screen‐printing and laser processing. Application …

The knowledge of the loss mechanisms in industrial back-contact back-junction (BC BJ)
silicon solar cells and their dependence on geometrical and substrate parameters provides …

In the ALBA-II project, Q-Cells SE, Bitterfeld-Wolfen, Germany, and the Institute for Solar
Energy Research Hamelin, Emmerthal, Germany, are developing high-efficiency emitter …

The determination of the emitter saturation current density J0e of symmetrical test structures,
analyzed by injectiondependent lifetime spectroscopy (IDLS), in high as well as in low …

Front and rear contacted wafer-based c-Si solar cells characterized by P-diffused emitter
and Al-based back surface field currently constitute the dominant solar cell architecture in …

The performance of n-type Si back-contact back-junction (BC-BJ) solar cells under
illumination with high energy ultraviolet (UV) photons was investigated. The impact of the …

The role of the phosphorus-doped front surface field (FSF) in n-type back-contact back-
junction silicon solar cells was analyzed. The FSF improves the quality of the front surface …

In this work, we focus on the optimization of small-area n+ np+ n-type silicon solar cells
featuring an amorphous/crystalline silicon heterojunction (a-Si: H/c-Si SHJ) rear emitter. For …

This paper focuses on the analysis of local phosphorous laser doping in high-efficiency
solar cells. Those so-called selective emitters are intended to reduce the contact …