[图书][B] Physics of semiconductors

M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

A photodetector based on p-Si/n-ZnO nanotube heterojunctions with high ultraviolet responsivity

TH Flemban, MA Haque, I Ajia, N Alwadai… - … applied materials & …, 2017 - ACS Publications
Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of
visible and infrared photodetectors are needed for commercial applications. n-Type ZnO …

Structural and optical characterization of ZnO thin films for optoelectronic device applications by RF sputtering technique

S Sharma, S Vyas, C Periasamy… - Superlattices and …, 2014 - Elsevier
This work reports structural and optical study of ZnO thin films grown over p-type silicon (Si)
and glass substrates by RF magnetron sputtering technique. Surface morphological and …

Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes

D Ahn, JD Song, SS Kang, JY Lim, SH Yang, S Ko… - Scientific Reports, 2020 - nature.com
Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with
Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic …

Deep-UV nitride-on-silicon microdisk lasers

J Selles, C Brimont, G Cassabois, P Valvin, T Guillet… - Scientific Reports, 2016 - nature.com
Deep ultra-violet semiconductor lasers have numerous applications for optical storage and
biochemistry. Many strategies based on nitride heterostructures and adapted substrates …

Thickness dependent study of RF sputtered ZnO thin films for optoelectronic device applications

S Sharma, C Periasamy, P Chakrabarti - Electronic Materials Letters, 2015 - Springer
This work reports thickness dependent structural and optical studies of ZnO thin films grown
over p-type silicon (Si) and glass substrates using RF sputtering technique. The effect of …

Catalyst-free vertical ZnO-nanotube array grown on p-GaN for UV-light-emitting devices

N Alwadai, IA Ajia, B Janjua, TH Flemban… - … applied materials & …, 2019 - ACS Publications
One-dimensional (1D) structures-based UV-light-emitting diode (LED) has immense
potential for next-generation applications. However, several issues related to such devices …

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

D Ahn, SH Park - Scientific Reports, 2016 - nature.com
In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of
luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding …

Effects of Low Ag Doping on Physical and Optical Waveguide Properties of Highly Oriented Sol‐Gel ZnO Thin Films

M Dehimi, T Touam, A Chelouche… - … in Condensed Matter …, 2015 - Wiley Online Library
A sol‐gel dip‐coating process was used to deposit almost stress‐free highly c‐axis oriented
zinc oxide (ZnO) thin films onto glass substrates. The effects of low silver doping …

Excitons in nitride heterostructures: From zero-to one-dimensional behavior

D Rosales, T Bretagnon, B Gil, A Kahouli, J Brault… - Physical Review B …, 2013 - APS
We report an unusual temperature dependence of exciton lifetimes in arrays of GaN
nanostructures grown on semipolar (11-22) oriented Al 0.5 Ga 0.5 N alloy by molecular …