It is difficult to meet all the different material and economical requirements posed to a MEMS
structural layer that can be integrated with the electronics on the same substrate using a …

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction
transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA …

A real-time implementation of model predictive control (MPC) is presented in this paper.
MPC, also known as receding horizon control and moving horizon control, is widely …

THERMAL OXIDATION is one of the most important process steps in semiconductur
fabrication, which is used to produce high quality insolation layers. The chemical reaction …

The integration of complementary metal oxide semiconductor (CMOS) and
microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows …

Integrated 10/spl mu/m thick poly-SiGe gyroscopes are processed on top of an 8" standard
0.35/spl mu/m CMOS wafer with 5 metal levels by using an advanced plasma-enhanced …

This work demonstrates, for the first time, the use of poly-SiGe for the fabrication of both
piezoresistive and capacitive pressure sensors at CMOS-compatible temperatures. Despite …

Poly-SiGe offers an attractive alternative for low temperature MEMS post-processing above
CMOS. This paper presents several investigations made to obtain a crystalline material with …

This paper reports on an SOI-based 20 MHz MEMS torsional resonator, wafer-level
packaged using SiGe thin film and hermetically sealed using Al sputtering at 1Pa. The …

Ordered intermetallic films have a favorable combination of properties such as high strength,
metallic electrical conductivity, good oxidation and corrosion resistance, and a high melting …