Films of a-SiC: H grown on Si single crystal (100) by plasma-enhanced chemical vapor
deposition (PECVD) are analyzed by Fourier transform infrared (FTIR) spectroscopy …

Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC: H) films,
deposited from silane (SiH4) and methane (CH4) gas mixture by HW‐CVD method, were …

The present study reports on a detailed investigation on the transition from amorphous to
nanocrystalline silicon carbide films grown by means of reactive radiofrequency magnetron …

Different classes of interesting materials (such as protocrystalline, microcrystalline and
nanocrystalline) have been grown under conditions very near to those for the …

Laser annealing of hydrogenated amorphous silicon–carbon films with carbon content, x=
C/(C+ Si), ranging from 0.08 to 0.28, deposited on Corning glass, has been carried out by a …

The influence of carbon content on the crystallization process has been investigated for the
excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by …

Microcrystalline silicon carbide (μc-SiC) has several applications, such as solar cells, light-
emitting diodes and as optical coating for solar cells. Hydrogenated amorphous silicon …

The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD
and crystallized by KrF UV excimer laser annealing (ELA), for different annealing conditions …

Excimer laser irradiation was demonstrated to be effective for the crystallization of the
semiconducting form (aS) of amorphous hydrogenated carbon− germanium (a-GeXCY: H) …

The effect of the rf power on the structural and electrical properties of nanostructured silicon
carbon films deposited by Plasma Enhanced Chemical Vapour Deposition system, using …