Variations in process parameters affect the operation of integrated circuits (ICs) and pose a
significant threat to the continued scaling of transistor dimensions. Such parameter …

Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability
concerns in sub-100nm technologies. So far, studies of NBTI and its impact on circuit …

Performance variability in digital integrated circuits can largely affect parametric yield and
product reliability in ultra deep submicrometer technologies. As a result, variation resilience …

Instance and temperature-dependent power variation has a direct impact on quality of
sensing for battery-powered long-running sensing applications. We measure and …

With continuous scaling of transistors in each technology generation, NBTI and Process
Variation (PV) have become very important silicon reliability problems for the micro …

Low-temperature polycrystalline-silicon thin-film transistor (LTPS TFT) has emerged as one
of the promising candidates for low-power low-cost applications on flexible substrates. In this …

Instance and temperature-dependent leakage power variability is already a significant issue
in contemporary embedded processors, and one which is expected to increase in …

Dual-V t design technique has proven to be extremely effective in reducing subthreshold
leakage in both active and standby mode of operation of a circuit in submicrometer …

Interconnect opens are a major class of defects found in today's nanometer technologies.
These defects present subtle behavior that could lead to test escapes and hence …

Using the behavioral model of a circuit to perform behavioral Monte Carlo simulation
(BMCS) is a fast approach to estimate performance shift under process variation with …