The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

Photoelectrochemical (PEC) water splitting is a promising approach for hydrogen production
using solar energy with zero emissions. However, the solar-to-hydrogen efficiency (STH) of …

The realization of the first high-brightness blue-light-emitting diodes (LEDs) in 1993 sparked
a more than twenty-year period of intensive research to improve their efficiency. Solutions to …

With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell
nanowire-based LEDs grown using selective-area epitaxy and characterize their electro …

We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …

Nano-engineering III-nitride semiconductors offers a route to further control the
optoelectronic properties, enabling novel functionalities and applications. Although a variety …

GaN nanowires are promising for optical and optoelectronic applications because of their
waveguiding properties and large optical band gap. However, developing a precise …

LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-
state lighting. However, one drawback is the polarization field of the wurtzite heterostructure …

A fundamental understanding and advancement of nanopatterning and nanometrology are
essential in the future development of nanotechnology, atomic scale manipulation, and …