Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices
T Zhang, M Li, J Chen, Y Wang, L Miao, Y Lu… - Materials Science and …, 2022 - Elsevier
The desire for developing ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …
Intermediate band solar cells: Recent progress and future directions
Y Okada, NJ Ekins-Daukes, T Kita, R Tamaki… - Applied physics …, 2015 - pubs.aip.org
Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed.
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
Point defects in semiconductors can trap free charge carriers and localize excitons. The
interaction between these defects and charge carriers becomes stronger at reduced …
interaction between these defects and charge carriers becomes stronger at reduced …
Understanding intermediate-band solar cells
A Luque, A Martí, C Stanley - nature photonics, 2012 - nature.com
The intermediate-band solar cell is designed to provide a large photogenerated current
while maintaining a high output voltage. To make this possible, these cells incorporate an …
while maintaining a high output voltage. To make this possible, these cells incorporate an …
[图书][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
Using first-principles electronic structure calculations we identify the anion vacancies in II-VI
and chalcopyrite Cu-III-VI 2 semiconductors as a class of intrinsic defects that can exhibit …
and chalcopyrite Cu-III-VI 2 semiconductors as a class of intrinsic defects that can exhibit …
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions:<? format?> A Demonstration of a Key Operating Principle of the Intermediate-Band …
We present intermediate-band solar cells manufactured using quantum dot technology that
show for the first time the production of photocurrent when two sub-band-gap energy …
show for the first time the production of photocurrent when two sub-band-gap energy …
Valence-band anticrossing in mismatched III-V semiconductor alloys
We show that the band gap bowing trends observed in III-V alloys containing dilute
concentrations of Sb or Bi can be explained within the framework of the valence-band …
concentrations of Sb or Bi can be explained within the framework of the valence-band …
The intermediate band solar cell: progress toward the realization of an attractive concept
A Luque, A Martí - Advanced Materials, 2010 - Wiley Online Library
The intermediate band (IB) solar cell has been proposed to increase the current of solar
cells while at the same time preserving the output voltage in order to produce an efficiency …
cells while at the same time preserving the output voltage in order to produce an efficiency …
Engineering the electronic band structure for multiband solar cells
Using the unique features of the electronic band structure of GaN x As 1-x alloys, we have
designed, fabricated and tested a multiband photovoltaic device. The device demonstrates …
designed, fabricated and tested a multiband photovoltaic device. The device demonstrates …