Electric drive without electrical and mechanical sensors is the critical obligation in most of
the industrial applications due to its user-friendly hardware, lower maintenance, low cost …

High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …

SiC MOSFETs are a leading option for increasing the power density of power electronics;
however, for these devices to supersede the Si insulated-gate bipolar transistor, their …

This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The
model describes the static and dynamic behavior and accounts for leakage current and …

The presented compact model of SiC power MOSFETs is based on a thorough
consideration of the physical phenomena which are important for the device characteristics …

The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor
field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic …

Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-
high-voltage applications, generally above 600 V, because for lower blocking voltages, they …

A new analytical description of the trapped charge distribution at the semiconductor-
insulator interface of 4H-SiC vertical-DMOSFET has been derived as a function of the …

For the first time, a full analytical model of the electric field in the gate oxide of 4H-polytype
silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into …

This article has presented a physics-based model which replicates the failure of SiC
MOSFET under short-circuit (SC) case. The model is constructed on the base of the …