Monitoring or estimating the junction temperature of power semiconductor devices is a
requirement for degradation monitoring and predictive maintenance of power-electronic …

This paper presents a multi-stage gate driver based on a switched gate resistor topology for
paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …

Monitoring the junction temperature of power semi-conductor devices is a requirement for
degradation monitoring and predictive maintenance of power-electronic converters and …

For power electronics systems, the switching transient is critical for efficient and reliable
energy conversion. While the electromagnetic field simulation is instrumental in analyzing …

In this paper, an intelligent gate driver for parallel-connected silicon carbide (SiC) metal-
oxide-semiconductor field-effect transistors (MOSFETs) is presented. Commercial gate …

Silicon carbide (SiC) power metal‐oxide‐semiconductor field‐effect transistors (MOSFETs)
switch at an unprecedented speed, even at high currents. For accurate dynamic …

Diese Dissertation entstand im Rahmen meiner Arbeit als wissenschaftlicher Mitarbeiter im
Zeitraum von 2015 bis 2021 am Institut für Stromrichtertechnik und Elektrische Antriebe …

Power modules with silicon carbide (SiC) metal-oxide semiconductor field-effect transistors
(MOSFETs) offer low losses through high switching speeds and optimized loop inductances …

In this work, a gate driver is presented that allows to balance the temperature of parallel-
connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …