Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

State-of-the-art silicon carbide (SiC) power devices provide superior performance over
silicon devices with much higher switching frequencies/speed and lower losses. High …

Using silicon carbide (SiC) power devices can potentially improve the efficiency of a power
electronic system, but it may also introduce severe electromagnetic interference (EMI) …

Traditional SiC MOSFET switching models cannot predict the turn-off losses precisely in the
condition of small driver resistance and small load current, because they have not …

Unbalanced junction temperature (T j) distribution of a bridge leg can accelerate the
development of aging defects and reduce the lifetime of the converter. Therefore, T j balance …

Realizing zero turn-off loss (ZTL) of SiC mosfet s in zero voltage switching (ZVS) power
converters will further break the limitation of the switching frequency and push for higher …

To design simple and efficient inductive power transfer (IPT) systems, a minimum number of
conversion stages and an effective maximum efficiency tracking (MET) are the primary …

This article provides in-depth insight into the commutation processes of high-speed SiC
mosfet s and investigates how they are influenced by various parasitic inductances. The …

DC-to-DC power supplies are critical components for processors in high performance
computing and datacenter servers. Conversion from an intermediate bus voltage (eg, 12 or …

A boost power factor correction (PFC) circuit has replaced the diode rectifier to improve its
poor power factor performance, low efficiency, and output power limitation for conventional …