Emerging 2D metal oxides: from synthesis to device integration
Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …
optoelectronics due to their intriguing physical properties. In this review, an overview of …
Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …
[HTML][HTML] P-type electrical contacts for 2D transition-metal dichalcogenides
Digital logic circuits are based on complementary pairs of n-and p-type field effect transistors
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors
The semiconductor industry is transitioning to the 'More Moore'era, driven by the adoption of
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …
stability because charge carriers originating from the semiconductors interact with defects in …
All‐van‐der‐Waals barrier‐free contacts for high‐mobility transistors
X Zhang, H Yu, W Tang, X Wei, L Gao… - Advanced …, 2022 - Wiley Online Library
Ultrathin 2D semiconductor devices are considered to have beyond‐silicon potential but are
severely troubled by the high Schottky barriers of the metal–semiconductor contacts …
severely troubled by the high Schottky barriers of the metal–semiconductor contacts …
Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …
fundamental nanoscale science and various technological applications. They are a …
[HTML][HTML] High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
Doped graphene could be of use in next-generation electronic and photonic devices.
However, chemical doping cannot be precisely controlled in the material and leads to …
However, chemical doping cannot be precisely controlled in the material and leads to …
Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides
Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties
and potential for application in next-generation electronic devices. However, strong Fermi …
and potential for application in next-generation electronic devices. However, strong Fermi …
Memory applications from 2D materials
As existing silicon-based memory technologies are reaching their fundamental limit,
emerging memory alternatives, such as resistive random-access memories (RRAMs) …
emerging memory alternatives, such as resistive random-access memories (RRAMs) …