Emerging 2D metal oxides: from synthesis to device integration

K Zhou, G Shang, HH Hsu, ST Han… - Advanced …, 2023 - Wiley Online Library
Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …

Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices

Y Lei, T Zhang, YC Lin, T Granzier-Nakajima… - ACS Nanoscience …, 2022 - ACS Publications
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …

[HTML][HTML] P-type electrical contacts for 2D transition-metal dichalcogenides

Y Wang, JC Kim, Y Li, KY Ma, S Hong, M Kim, HS Shin… - Nature, 2022 - nature.com
Digital logic circuits are based on complementary pairs of n-and p-type field effect transistors
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

R Pendurthi, NU Sakib, MUK Sadaf, Z Zhang… - Nature …, 2024 - nature.com
The semiconductor industry is transitioning to the 'More Moore'era, driven by the adoption of
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto… - Nature …, 2022 - nature.com
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …

All‐van‐der‐Waals barrier‐free contacts for high‐mobility transistors

X Zhang, H Yu, W Tang, X Wei, L Gao… - Advanced …, 2022 - Wiley Online Library
Ultrathin 2D semiconductor devices are considered to have beyond‐silicon potential but are
severely troubled by the high Schottky barriers of the metal–semiconductor contacts …

Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering

S Sovizi, S Angizi, SA Ahmad Alem, R Goodarzi… - Chemical …, 2023 - ACS Publications
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …

[HTML][HTML] High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta… - Nature …, 2021 - nature.com
Doped graphene could be of use in next-generation electronic and photonic devices.
However, chemical doping cannot be precisely controlled in the material and leads to …

Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides

X Wang, Y Hu, SY Kim, R Addou, K Cho, RM Wallace - ACS nano, 2023 - ACS Publications
Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties
and potential for application in next-generation electronic devices. However, strong Fermi …

Memory applications from 2D materials

CC Chiang, V Ostwal, P Wu, CS Pang… - Applied Physics …, 2021 - pubs.aip.org
As existing silicon-based memory technologies are reaching their fundamental limit,
emerging memory alternatives, such as resistive random-access memories (RRAMs) …