Materials quest for advanced interconnect metallization in integrated circuits
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …
improvements while increasing the cost and complexity of the technology with each …
[HTML][HTML] The search for the most conductive metal for narrow interconnect lines
D Gall - Journal of Applied Physics, 2020 - pubs.aip.org
A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
Properties of ultrathin molybdenum films for interconnect applications
V Founta, JP Soulié, K Sankaran, K Vanstreels… - Materialia, 2022 - Elsevier
The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …
Ultralow electron-surface scattering in nanoscale metals leveraging Fermi-surface anisotropy
Increasing resistivity of metal wires with reducing nanoscale dimensions is a major
performance bottleneck of semiconductor computing technologies. We show that metals with …
performance bottleneck of semiconductor computing technologies. We show that metals with …
[HTML][HTML] Resistivity size effect in epitaxial Ru (0001) layers
E Milosevic, S Kerdsongpanya, A Zangiabadi… - Journal of Applied …, 2018 - pubs.aip.org
Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …
Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials
Intermetallic compounds have been proposed as potential interconnect materials for
advanced semiconductor devices. This study reports the interdiffusion reliability and …
advanced semiconductor devices. This study reports the interdiffusion reliability and …
Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects
Ruthenium and molybdenum are of great potential to replace copper for use as the next-
generation interconnect metallization. Important parameters including their intrinsic …
generation interconnect metallization. Important parameters including their intrinsic …
Resistivity size effect in epitaxial Rh (001) and Rh (111) layers
Rh (001) and Rh (111) layers with thickness d= 8-181 nm are sputter deposited onto MgO
(001) and Al2O3 (112̅0) substrates and their resistivity ρ measured in situ and ex situ at …
(001) and Al2O3 (112̅0) substrates and their resistivity ρ measured in situ and ex situ at …
Influence of suppressing additive malachite green on superconformal cobalt electrodeposition
X Ma, Y Li, P Yang, J Zhang, M An - Journal of Electroanalytical Chemistry, 2022 - Elsevier
A novel suppressor, malachite green, was used to achieve bottom-up growth of cobalt in this
work. Electrostatic potential, HOMO/LUMO of malachite green was calculated to provide an …
work. Electrostatic potential, HOMO/LUMO of malachite green was calculated to provide an …
Sub-100 nm2 Cobalt Interconnects
Co has elicited a strong interest to replace Cu for future interconnect applications in
microelectronic circuits due to its potentially lower resistivity and better reliability at scaled …
microelectronic circuits due to its potentially lower resistivity and better reliability at scaled …