The review outlines the basic principles of operation of resonant-tunnelling diodes (RTDs)
and RTD oscillators followed by an overview of their development in the last decades …

We report the generation of room temperature microwave oscillations from GaN/AlN
resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling …

Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier
heterostructure diodes at room temperature. Three different designs were grown on semi …

Resonant tunneling diodes (RTDs) are candidates for high power terahertz oscillators, and
form the basis for understanding the quantum confinement and vertical transport in quantum …

Resonant tunneling diodes are nano-devices which have characteristics of negative
differential resistance. They are widely used in digital and analog circuits to reduce …

For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride
double barrier heterostructures has remained elusive at room temperature. In this work we …

We report on the design and fabrication of high current density GaN/AlN double barrier
resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN …

In this Letter, we present the excellent negative differential resistance (NDR) characteristics
of AlN/GaN double-barrier resonant tunneling diodes (RTDs) in which the active layers are …

Quantum confinements, especially quantum in narrow wells, have been investigated
because of their controllability over electrical parameters. For example, quantum dots can …

We report the direct measurement of record fast switching speeds in GaN/AlN resonant
tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy …