Formation, detection, and function of oxygen vacancy in metal oxides for solar energy conversion
Oxygen vacancy (VO) is one of the most common defects in metal oxides (MOs), which
endow the MOs with many unique physiochemical properties. Even though VO engineering …
endow the MOs with many unique physiochemical properties. Even though VO engineering …
Defects and reliability of GaN‐based LEDs: review and perspectives
Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
The nonradiative lifetime (τ NR) of the near-band-edge emission in various quality GaN
samples is compared with the results of positron annihilation measurement, in order to …
samples is compared with the results of positron annihilation measurement, in order to …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors
Y Hori, Z Yatabe, T Hashizume - Journal of Applied Physics, 2013 - pubs.aip.org
We have investigated the relationship between improved electrical properties of Al 2 O
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …
Origination and evolution of point defects in AlN film annealed at high temperature
C Kai, H Zang, J Ben, K Jiang, Z Shi, Y Jia, X Cao… - Journal of …, 2021 - Elsevier
While high temperature annealing has been proven to be an effective strategy to reduce
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0. 6Ga0. 4N films grown on AlN …
SF Chichibu, H Miyake, Y Ishikawa, M Tashiro… - Journal of Applied …, 2013 - pubs.aip.org
Luminescence dynamics for the near-band-edge (NBE) emission peak at around 250 nm of
c-plane Si-doped Al 0.6 Ga 0.4 N films grown on AlN templates by low-pressure …
c-plane Si-doped Al 0.6 Ga 0.4 N films grown on AlN templates by low-pressure …
Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation
Y Taniyasu, M Kasu - Applied physics letters, 2010 - pubs.aip.org
(11 2 0) A-plane AlN p–n junction light-emitting diode (LED) with a wavelength of 210 nm is
demonstrated. The electroluminescence from the A-plane LED is inherently polarized for the …
demonstrated. The electroluminescence from the A-plane LED is inherently polarized for the …
Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy
A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
Overview of band-edge and defect related luminescence in aluminum nitride
T Koppe, H Hofsäss, U Vetter - Journal of Luminescence, 2016 - Elsevier
This review gives the reader an overview of the published results describing near band-
edge as well as defect related luminescence in aluminum nitride, also presenting findings …
edge as well as defect related luminescence in aluminum nitride, also presenting findings …