[图书][B] Dekker encyclopedia of nanoscience and nanotechnology

JA Schwarz, CI Contescu, K Putyera - 2004 - books.google.com
Nanoscience encompasses all scientific phenomena that transpire in dimensions spanning
the range of multiple atom clusters, molecular aggregates, supermolecular structures …

Quantum-dot heterostructure lasers

NN Ledentsov, M Grundmann… - IEEE Journal of …, 2000 - ieeexplore.ieee.org
Quantum-dot (QD) heterostructures are nanoscale coherent insertions of narrow-gap
material in a single-crystalline matrix. These tiny structures provide unique opportunities to …

Saturation and noise properties of quantum-dot optical amplifiers

TW Berg, J Mork - IEEE Journal of Quantum Electronics, 2004 - ieeexplore.ieee.org
Based on extensive numerical calculations, quantum-dot (QD) amplifiers are predicted to
offer higher output power and lower noise figure compared to bulk as well as quantum well …

Characterization of InAs quantum dots in strained quantum wells

A Stintz, GT Liu, AL Gray, R Spillers… - Journal of Vacuum …, 2000 - pubs.aip.org
The properties of InAs quantum dots placed in a strained InGaAs quantum well are
investigated. The structures are grown by solid-source molecular beam epitaxy on GaAs …

High-frequency modulation characteristics of 1.3-μm InGaAs quantum dot lasers

SM Kim, Y Wang, M Keever… - IEEE Photonics …, 2004 - ieeexplore.ieee.org
We report results of small-signal modulation characteristics of self-assembled 1.3-μm
InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide …

Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts

NN Ledentsov - IEEE Journal of Selected Topics in Quantum …, 2002 - ieeexplore.ieee.org
Recent progress in semiconductor quantum-dot (QD) lasers approaches qualitatively new
levels, when dramatic progress in the development of the active medium already motivates …

Quantum dash device

A Stintz, PM Varangis, KJ Malloy, LF Lester… - US Patent …, 2003 - Google Patents
Quantum dot active region Structures are disclosed. In a preferred embodiment, the
distribution in dot size and the Sequence of optical transition energy values associated with …

Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

F Klopf, S Deubert, JP Reithmaier, A Forchel - Applied Physics Letters, 2002 - pubs.aip.org
The influence of several design parameters on the temperature stability of the emission
wavelength of 980 nm GaInAs/(Al) GaAs quantum-dot lasers was studied. The results …

Highly efficient GaInAs/(Al) GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

F Klopf, JP Reithmaier, A Forchel - Applied Physics Letters, 2000 - pubs.aip.org
Highly efficient 980 nm GaInAs/(Al) GaAs quantum-dot (QD) and quantum-well (QW) lasers
based on a single active layer have been fabricated and compared in view of high-power …

Quantum dot lasers

A Stintz, PM Varangis, KJ Malloy, L Lester… - US Patent …, 2004 - Google Patents
A quantum dot active region is disclosed in which quantum dot layers are formed using a
self-assembled growth technique. In one embodiment, growth parameters are selected to …