Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency

SA Yerişkin, EE Tanrıkulu, M Ulusoy - Materials Chemistry and Physics, 2023 - Elsevier
This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …

A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer

Ş Altındal, A Barkhordari, S Özçelik… - Physica …, 2021 - iopscience.iop.org
The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm 2 O
3) polymer interlayers on the electrical characteristics in detail. The fabricated reference …

On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 …

A Barkhordari, H Mashayekhi, P Amiri, Ş Altındal… - Applied Physics A, 2023 - Springer
To increase the performance of the metal–semiconductor (MS) structure, MS and pure
polyvinyl-pyrrolidine (PVP), Gr,(ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed …

Role of graphene nanoparticles on the electrophysical processes in PVP and PVP: ZnTiO3 polymer layers at Schottky diode (SD)

A Barkhordari, HR Mashayekhi, P Amiri… - Semiconductor …, 2023 - iopscience.iop.org
In this paper, a polyvinyl pyrrolidine (PVP) polymer layer is inserted between the metal–
semiconductor (MS) structure to manufacture a metal–polymer–semiconductor (MPS) …

Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer

EE Tanrıkulu, Ö Berkün, M Ulusoy, B Avar… - Materials Today …, 2024 - Elsevier
This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …

Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures

J Farazin, MS Asl, G Pirgholi-Givi, SA Delbari… - Journal of Materials …, 2021 - Springer
Abstract In this paper,(Co–TeO 2) nanostructures were synthesized using the microwave-
assisted method for the fabrication of (PVP: Co–TeO 2) as an organic interlayer (OI) at Al/p …

Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers

E Erbilen Tanrıkulu - Journal of Materials Science: Materials in Electronics, 2023 - Springer
Here, the effects of PVC and carbon-nanotube (CNT)-doped PVC interlayers on the
electrical and dielectric properties of Au/(n-Si) Schottky diode (SD) were investigated …

Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer

A Tataroğlu, Ş Altındal… - Journal of Materials …, 2021 - Springer
In this research, for determining the effects of the (Gr-PVP) interfacial layer, two types of
diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the …

The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures

A Barkhordari, S Özçelik, Ş Altındal… - Physica …, 2021 - iopscience.iop.org
In this paper, the influence of doping barium titanate in the polyvinyl pyrrolidine polymer
sandwiched between the metal-semiconductor on the conduction mechanism and the …

The fabrication of Al/p-Si (MS) type photodiode with (% 2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics

HG Çetinkaya, Ö Sevgili, Ş Altındal - Physica B: Condensed Matter, 2019 - Elsevier
In this study, Al/p-Si (MS) type photodiodes with (% 2 ZnO-doped CuO) interlayer were
fabricated to investigate the effects of this interlayer on the electrical characteristics. Besides …