Results of density-functional calculations for indium thiospinel semiconductors substituted at
octahedral sites with isolated transition metals (M= Ti, V) show an isolated partially filled …

Isothermal sections of quasi-ternary systems Ag2S–In2S3–Si (Ge) S2 at 298K were
constructed using XRD results. Vertical sections Ag2S–In2S3, AgInS2–SiS2, AgIn5S8–Ag1 …

As a promising solar‐energy material, the electronic structure and optical properties of Beta
phase indium sulfide (β‐In2S3) are still not thoroughly understood. This paper devotes to …

The crystal structure of annealed β-In2S3 thin films with different thickness was investigated
by X-ray diffraction technique. Lattice parameters, crystallite size and microstrain were …

Spinel indium sulphide exists in three phases. The tetragonal β-phase transforms to the
cubic α-phase at 420° C which further transforms to the trigonal γ-phase at 754° C. Due to …

The indium thiospinels In 2 S 3 and MgIn 2 S 4 are promising host for the intermediated
band (IB) photovoltaic materials due to their ideal band gap value. Here, the optical …

Due to the violation of the valence electron counting (VEC) rule as well as the excess Sn
introduced in the synthesis, cubic In5S4 has been recognized as In4SnS4. However, recent …

Abstract Sulphurization processes in Cu (In, Ga) Se 2 thin-film solar cells has been
intensively studied in the last decade as a viable alternative to the existing Ga-grading. The …

Using density functional theory calculations, the effects of point defects, including sulfur
vacancy, indium vacancy, and niobium doping, on the crystal structure, electronic structure …

This joint experimental and theoretical study of the structural and vibrational properties of β-
In2S3 upon compression shows that this tetragonal defect spinel undergoes two reversible …