(21) Appl. No.: 15/726, 525 (22) Filed: Oct. 6, 2017 (57) ABSTRACT A vertical field-effect
transistor and a method for fabricating the same. The vertical field-effect transistor includes a …

A directed self-assembly composition for pattern formation, includes two or more kinds of
polymers. The two or more kinds of polymers each do not have a silicon atom in a main …

(57) ABSTRACT A directed self-assembling composition for pattern forma tion includes a
block copolymer. The block copolymer includes a polystyrene block having a styrene unit …

(57) ABSTRACT A vertical field-effect transistor and a method for fabricating the same. The
vertical field-effect transistor includes a substrate and a bottom source/drain region. The …

(57) ABSTRACT A method of forming a patterned chemical epitaxy template, for orientation
of a self-assemblable block copolymer includ ing first and second polymer blocks, on a …

A method for manufacturing a semiconductor device includes forming a first nanosheet
device and forming a second nanosheet device spaced apart from the first nanosheet device …

(57) ABSTRACT A method of patterning a block copolymer layer, the method including:
providing a Substrate including a topographic pattern on a Surface of the Substrate, wherein …

The invention provides compositions and methods for induc ing and enhancing order and
nanostructures in organosilicon block copolymers compositions by including certain organic …

8,362,179 B2 1/2013 Gopalan et al. 2006/0258826 A1 1 1/2006 Matyjaszewski et al.
2008/0045686 A1 2/2008 Meagher et al. 2009/0111703 A1 4/2009 Gopalan 2010.0036055 …

BACKGROUND This disclosure relates to the field of electrical compo nents. More
particularly, this disclosure relates to electrical components to provide a random electrical …