As a newest family member of the III-nitrides, BN is considered amongst the remaining
frontiers in wide energy bandgap semiconductors with potentials for technologically …

This review gives the reader an overview of the published results describing near band-
edge as well as defect related luminescence in aluminum nitride, also presenting findings …

We have derived consistent sets of band parameters (band gaps, crystal field splittings,
band-gap deformation potentials, effective masses, and Luttinger and EP parameters) for …

Photoluminescence spectra of high-quality bulk AlN crystals are reported. In addition to the
expected linear luminescence features like free excitons and donor-bound excitons …

AlN and AlGaN epitaxial films were deposited by metal organic chemical vapor deposition
on single crystal AlN substrates processed from AlN boules grown by physical vapor …

Seeded growth of AlN boules was achieved on m-(101¯ 0) and c-(0001¯) orientations by
physical vapor transport (PVT). The single crystalline m-and c-plane seeds were cut from …

This paper provides a brief overview on recent advances made in authors' laboratory in
epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and …

The intrinsic anisotropic optical properties of wurtzite AlN are investigated in absorption and
emission. Full access to the anisotropy of the optical response of the hexagonal material is …

This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …

A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …