There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

Progress in computing architectures is approaching a paradigm shift: traditional computing
based on digital complementary metal-oxide semiconductor technology is nearing physical …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

Hetero‐epitaxy for integration of efficient III‐V lasers on silicon can enable wafer‐scale
silicon photonic integrated circuits, which can unleash the full advantages of silicon …

Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics
in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior …

Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by
homo-epitaxy on a U-shaped patterned Si (001) substrate. With in-situ III-V growth on such …

Realization of fully integrated silicon photonics has been handicapped by the lack of a
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …

Heteroepitaxy of indium phosphide (InP) and its lattice-matched alloys on silicon (Si) show
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …