Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring

TA Pham, A Qamar, T Dinh, MK Masud… - Advanced …, 2020 - Wiley Online Library
Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …

[图书][B] Inorganic nanowires: applications, properties, and characterization

M Meyyappan, MK Sunkara - 2018 - taylorfrancis.com
Advances in nanofabrication, characterization tools, and the drive to commercialize
nanotechnology products have contributed to the significant increase in research on …

Electrically pumped random lasers

SF Yu - Journal of Physics D: Applied Physics, 2015 - iopscience.iop.org
Over the past decades extensive research has been carried out to study the lasing
characteristics of random media. Some unexpected phenomena of random lasing action …

Unusually strong space-charge-limited current in thin wires

AA Talin, F Léonard, BS Swartzentruber, X Wang… - Physical review …, 2008 - APS
The current-voltage characteristics of thin wires are often observed to be nonlinear, and this
behavior has been ascribed to Schottky barriers at the contacts. We present electronic …

ZnO-nanowire-inserted GaN/ZnO heterojunction light-emitting diodes

MC Jeong, BY Oh, MH Ham, SW Lee, JM Myoung - small, 2007 - yonsei.elsevierpure.com
The fabrication process of ZnO-nanowire-inserted GaN/ZnO heterojunction light-emitting
diodes (LEDs) by formation of p+ aN film/n-ZnO nanowire array/n+ ZnO film structures, has …

Selective alignment of a ZnO nanowire in a magnetic field for the fabrication of an air-gap field-effect transistor

SW Lee, MH Ham, JP Kar, W Lee… - Microelectronic …, 2010 - Elsevier
An air-gap field-effect transistor (FET) was prepared by selectively aligning a Ni-capped ZnO
nanowire in a magnetic field on a pre-fabricated electrode patterns formed by lithography. It …

Measurement of metal/carbon nanotube contact resistance by adjusting contact length using laser ablation

C Lan, P Srisungsitthisunti, PB Amama… - …, 2008 - iopscience.iop.org
A technique of measuring contact resistance between an individual nanotube and a
deposited metallic film is described. Using laser ablation to sequentially shorten the contact …

Microscale Contacts for Nanowire Characterization Using Microscope Projection Photolithography

AJG Rea, X Zhang, N Mobrhan-Shafiee… - ACS Applied Nano …, 2024 - ACS Publications
Microscope projection photolithography (MPP) offers a versatile method of prototyping
microscale devices. The benefits of MPP include the ability to create features at a variety of …

Transport characterization in nanowires using an electrical nanoprobe

AA Talin, F Leonard, AM Katzenmeyer… - Semiconductor …, 2010 - iopscience.iop.org
Electrical transport in semiconductor nanowires is commonly measured in a field effect
transistor configuration, with lithographically defined source, drain and in some cases, top …

Size-dependent persistent photocurrent and surface band bending in -axial GaN nanowires

HY Chen, RS Chen, NK Rajan, FC Chang… - Physical Review B …, 2011 - APS
The size-dependent persistent photocurrent (PPC), which refers to a photocurrent persisting
for a long time after the excitation light source is terminated, has been investigated in m-axial …