Investigation of nanosheet-FET based logic gates at sub-7 nm technology node for digital IC applications
The successful fabrication of Nanosheet (NS) FET by Samsung/IBM for below 7 nm
technology nodes has geared up the semiconductor industry towards future electronics. In …
technology nodes has geared up the semiconductor industry towards future electronics. In …
Optimization of design space for vertically stacked junctionless nanosheet FET for analog/RF applications
This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
A comprehensive investigation of vertically stacked silicon nanosheet field effect transistors: an analog/rf perspective
In this article, the analog/RF performance of n-channel vertically stacked gate all around
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …
Design insights into thermal performance of vertically stacked JL-NSFET with high-k gate dielectric for sub 5-nm technology node
Design Insights into Thermal Performance of Vertically Stacked JL-NSFET with High-k Gate
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Nanowire array-based MOSFET for future CMOS technology to attain the ultimate scaling limit
Silicon nanowire (SiNW) structures are the essential foundations of the next generation
highly efficient and lowcost electronic devices because of their specific chemical, optical …
highly efficient and lowcost electronic devices because of their specific chemical, optical …
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design
In order to achieve reliability improvement in metal–oxidesemiconductor field-effect
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …
[HTML][HTML] Impact of deep cryogenic temperatures on gate stack dual material DG MOSFET performance: analog and RF analysis
By understanding the potential benefits of Gate Stack Dual Material double gate MOSFET
(DG MOSFET), this research aims to contribute to the investigation of its electrical …
(DG MOSFET), this research aims to contribute to the investigation of its electrical …
Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance
The optimization of device dimensions along with high-k gate dielectric is investigated in this
work for improving RF/analog performance of double gate (DG) TFET device. Through …
work for improving RF/analog performance of double gate (DG) TFET device. Through …
Design and analysis of a double gate SiGe/Si tunnel FET with unique inner-gate engineering
An inner-gate engineered double gate heterostructure tunnel field effect transistor (SiGe/Si-
IGTFET) has been presented. The inner-gate is grown at the center of the Si 0.6 Ge 0.4/Si …
IGTFET) has been presented. The inner-gate is grown at the center of the Si 0.6 Ge 0.4/Si …
Linearity performance and harmonic distortion analysis of IGE junctionless silicon nanotube-FET for wireless applications
This manuscript investigates the effect of inner gate engineering (IGE) on the linearity and
harmonic distortion performance of junctionless (JL) silicon-nanotube (Si-NT) FETs for …
harmonic distortion performance of junctionless (JL) silicon-nanotube (Si-NT) FETs for …