An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched …
A Kranti, S Haldar, RS Gupta - Solid-State Electronics, 2002 - Elsevier
The present paper proposes an improved charge control model of lattice-mismatched
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …
An analytical model for the photodetection mechanisms in high-electron mobility transistors
MA Romero, MAG Martinez… - IEEE transactions on …, 1996 - ieeexplore.ieee.org
The use of microwave high-electron mobility transistors (HEMTs) as photodetectors or
optically controlled circuit elements have attracted interest. A model of the optical …
optically controlled circuit elements have attracted interest. A model of the optical …
Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model
TH Yu, KF Brennan - IEEE Transactions on Electron Devices, 2003 - ieeexplore.ieee.org
We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor
(HEMT) that includes a nonlinear model of the strain polarization fields produced at the …
(HEMT) that includes a nonlinear model of the strain polarization fields produced at the …
Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model
T Janik, B Majkusiak - IEEE Transactions on Electron Devices, 1998 - ieeexplore.ieee.org
The effects of carrier energy quantization in the semiconductor surface region on
performance of the metal-oxide-semiconductor (MOS) transistor are theoretically considered …
performance of the metal-oxide-semiconductor (MOS) transistor are theoretically considered …
Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control
S Imanaga, H Kawai - Journal of applied physics, 1997 - pubs.aip.org
We propose a novel AlN/GaN insulated gate heterostructure field effect transistor (FET) with
modulation doping. The vertical structure of the FET was AlN (1)/AlGaN (2)/InGaN (3)/AlGaN …
modulation doping. The vertical structure of the FET was AlN (1)/AlGaN (2)/InGaN (3)/AlGaN …
DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics
Y Ando, T Itoh - IEEE transactions on electron devices, 1990 - ieeexplore.ieee.org
A practical model for DC, small-signal, and noise characteristics in two-dimensional electron
gas field-effect transistors is discussed. The model includes accurate charge-control …
gas field-effect transistors is discussed. The model includes accurate charge-control …
Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs
H Mizuta, K Yamaguchi, M Yamane… - IEEE transactions on …, 1989 - ieeexplore.ieee.org
Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs (high electron
mobility transistors) are analyzed using two-dimensional numerical simulation based on a …
mobility transistors) are analyzed using two-dimensional numerical simulation based on a …
A technique for modelling S-parameters for HEMT structures as a function of gate bias
SJ Mahon, DJ Skellern, F Green - IEEE transactions on …, 1992 - ieeexplore.ieee.org
A physically based technique for modeling HEMT structure S-parameters is presented. The
core of the model is directly dependent on the HEMT wafer structure and the physical gate …
core of the model is directly dependent on the HEMT wafer structure and the physical gate …
Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
T Wang, CH Hsieh - IEEE transactions on electron devices, 1990 - ieeexplore.ieee.org
Nonequilibrium electron transport in InGaAs pseudomorphic MODFETs has been analyzed
with the moment equations approach. In the model, the momentum and energy balance …
with the moment equations approach. In the model, the momentum and energy balance …
[图书][B] Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming
EAB Cole - 2009 - books.google.com
Part of my lecturing work in the School of Mathematics at the University of Leeds involved
teaching quantum mechanics and statistical mechanics to mathematics undergraduates …
teaching quantum mechanics and statistical mechanics to mathematics undergraduates …