Herein, a novel process of substrate pretreatment and high temperature annealing for
elementary source vapor phase epitaxy (EVPE) is shown to be capable of optimizing the …

AlN homoepitaxy is a promising way to obtain high-quality AlN and Al-rich AlGaN and thus
deep ultraviolet devices. The defect evolution in homoepitaxial AlN grown by high …

Micron-thick BN films are prepared on 2 in. c-plane sapphire substrates using low-pressure
halide vapor phase epitaxy, with BCl3 and NH3 being utilized as the respective sources of …

AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by
hydride vapor phase epitaxy. The influence of growth conditions and substrates on the …

(002) hexagonal boron nitride (h-BN) micron films were epitaxially grown on c-plane
sapphire substrates with miscut angles to m-plane (m-miscut angle) by high-temperature …

Aluminum nitride (AlN) is the promising substrates material for the epitaxial growth of III-
nitrides devices, such as high-power, high-frequency electronic, deep ultraviolet …

hexagonal boron nitride (h-BN) films are epitaxially grown on c-plane sapphire substrates by
low-pressure and high-temperature halide vapor phase epitaxy, using boron trichloride and …

The interface formation mechanisms of AlN films on sapphire substrates grown by the
elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication …

As interest in power semiconductors is growing recently, research on device design and
application using light energy gap materials such as SiC and GaN is being actively …

Gallium nitride (GaN) and its close chemical counterparts-aluminum nitride (AlN), indium
nitride, and their ternary alloys Al (Ga, In) N-form the III-V nitride-based semiconductor …