[图书][B] Functional nanomaterials and devices for electronics, sensors and energy harvesting
This book is devoted to fast the evolving field of modern material science and
nanoelectronics, and more particularly to physics and technology of functional …
nanoelectronics, and more particularly to physics and technology of functional …
[HTML][HTML] Orientation competition growth and mechanism of SrTiO3 film on CeO2 layer
J Ye, S Mou, R Zhu, L Liu, Y Li - Vacuum, 2021 - Elsevier
A series of SrTiO 3 films were deposited on CeO 2 layer by pulsed laser deposition at
substrate temperature in the range of 300° C–700° C. It was found that the (110)-oriented …
substrate temperature in the range of 300° C–700° C. It was found that the (110)-oriented …
Voltammetric study and electrodeposition of tellurium, lead, and lead telluride in room-temperature ionic liquid 1-ethyl-3-methylimidazolium tetrafluoroborate
Room-temperature ionic liquid 1-ethyl-3-methylimidazolium tetrafluoroborate (RTIL EMI-BF
4) was used as the electrolyte to study the voltammetric behavior of Te (IV), Pb (II), and their …
4) was used as the electrolyte to study the voltammetric behavior of Te (IV), Pb (II), and their …
Electrochemical epitaxial PbTe nanowires photodetector for NIR response
Z Guo, Z Zhang, R Yan, S Feng - Nanotechnology, 2022 - iopscience.iop.org
Lead telluride nanowires deposited by electrochemical atomic layers have broad application
prospects in the field of photodetectors. In this work, using the method of electrochemical …
prospects in the field of photodetectors. In this work, using the method of electrochemical …
Behavior of Al Impurity in ZnO Films: Influence of Al‐Level Doping on Structure, X‐Ray Photoelectron Spectroscopy and Transport Properties
Transparent and conductive ZnO: Al thin films have been deposited by a reactive magnetron
sputtering using the layer‐by‐layer growth method. The grown Al‐doped ZnO films of about …
sputtering using the layer‐by‐layer growth method. The grown Al‐doped ZnO films of about …
Interplay between structure, stoichiometry, and electron transfer dynamics in SILAR-based quantum dot-sensitized oxides
We quantify the rate and efficiency of picosecond electron transfer (ET) from PbS
nanocrystals, grown by successive ionic layer adsorption and reaction (SILAR), into a …
nanocrystals, grown by successive ionic layer adsorption and reaction (SILAR), into a …
Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)
DO Banga, R Vaidyanathan, L Xuehai, JL Stickney… - Electrochimica …, 2008 - Elsevier
This article describes optimization of a cycle for the deposition of lead telluride (PbTe)
nanofilms using electrochemical atomic layer deposition (ALD). PbTe is of interest for the …
nanofilms using electrochemical atomic layer deposition (ALD). PbTe is of interest for the …
A simple method to fabricate an NIR detector by PbTe nanowires in a large scale
A simple method was used to fabricate a near-infrared (NIR) detector using PbTe
nanostructures. Samples were synthesized by tellurization of lead sheets in a tube furnace …
nanostructures. Samples were synthesized by tellurization of lead sheets in a tube furnace …
Observation of triangle pits in PbSe grown by molecular beam epitaxy
TN Xu, HZ Wu, JX Si, CF Cao - Applied surface science, 2007 - Elsevier
PbSe thin films on BaF2 (111) were grown by molecular beam epitaxy with different
selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio …
selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio …
Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy
SO Ferreira, EC Paiva, GN Fontes… - Journal of applied …, 2003 - pubs.aip.org
We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …