Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …
technology which is considered one of the most standout emerging memory technologies …
Conduction mechanism of valence change resistive switching memory: a survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Multibit memory operation of metal-oxide bi-layer memristors
Emerging nanoionic memristive devices are considered as the memory technology of the
future and have been winning a great deal of attention due to their ability to perform fast and …
future and have been winning a great deal of attention due to their ability to perform fast and …
Oxide-based RRAM materials for neuromorphic computing
XL Hong, DJJ Loy, PA Dananjaya, F Tan… - Journal of materials …, 2018 - Springer
In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …
Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
On the switching parameter variation of metal oxide RRAM—Part II: Model corroboration and device design strategy
Using the model developed in Part I of this two-part paper, the simulated dc sweep and
pulse transient characteristics of a metal oxide resistive random access memory cell are …
pulse transient characteristics of a metal oxide resistive random access memory cell are …
Radiofrequency switches based on emerging resistive memory technologies-a survey
High-performance radio frequency (RF) switches play a critical role in allowing radio
transceivers to provide access to shared resources such as antennas. They are important …
transceivers to provide access to shared resources such as antennas. They are important …
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition
The bipolar resistive switching (RS) characteristics of the ZnO-based TiN/Al 2 O 3/ZnO/Al 2 O
3/TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al …
3/TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al …
High-Yield and Uniform NbOx-Based Threshold Switching Devices for Neuron Applications
Threshold switching (TS) devices based on NbO x materials show intriguing potential for
constructing artificial neurons in a neuromorphic machine. However, the high electroforming …
constructing artificial neurons in a neuromorphic machine. However, the high electroforming …