Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Quantum conductance in memristive devices: fundamentals, developments, and applications
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …
breakthrough for the development of new information processing technologies based on …
On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering
J Xu, H Wang, Y Zhu, Y Liu, Z Zou, G Li, R Xiong - Applied Surface Science, 2022 - Elsevier
Memristors have received tremendous attention recently for neuromorphic computing and
high-density data storage due to their potential for miniaturization; however, the …
high-density data storage due to their potential for miniaturization; however, the …
Controlling the formation of conductive pathways in memristive devices
Resistive random‐access memories are promising candidates for novel computer
architectures such as in‐memory computing, multilevel data storage, and neuromorphics …
architectures such as in‐memory computing, multilevel data storage, and neuromorphics …
Synaptic plasticity and quantized conductance states in TiN-Nanoparticles-Based memristor for neuromorphic system
Controlled conductive filament formation in the resistive random access memory device is
an essential requirement for analog resistive switching to develop artificial synapses. In this …
an essential requirement for analog resistive switching to develop artificial synapses. In this …
[HTML][HTML] Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory
We demonstrate the reliable resistive switching performance of nanocrystalline-HfO 2 inside
amorphous-HfO x in TaN/nc-HfO 2/ITO memristor structure. Transmission electron …
amorphous-HfO x in TaN/nc-HfO 2/ITO memristor structure. Transmission electron …
Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films
We report on the development of hybrid organic–inorganic material-based flexible memristor
devices made by a fast and simple electrochemical fabrication method. The devices consist …
devices made by a fast and simple electrochemical fabrication method. The devices consist …