One-dimensional nanostructures are generally cited as nanowires, nanofibers, nanotubes,
and so on. The foremost prominent feature of these materials is their electrical conductivity …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Semiconductor nanowires (NWs) represent a new class of materials and a shift from
conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …

Chemical/gas sensors are playing and will play a crucial role in smart building, smart
houses, environmental monitoring, food quality monitoring and in the customization of …

Here we review the characteristics of “van der Waals epitaxy”(vdWE) as an alternative
epitaxy mechanism that has been demonstrated as a viable method for circumventing the …

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …

Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …

Efficient infrared light emitters integrated on the mature Si technology platform could lead to
on-chip optical interconnects as deemed necessary for future generations of ultrafast …

With the continued maturation of III–V nanowire research, expectations of material quality
should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be …

GaN-based light-emitting diodes (LEDs) on sapphire are known to exhibit high efficiency
and long lifetime. Currently, Si substrate has been explored for the replacement of sapphire …