III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

A review is presented of the fabrication, operation, and applications of rare-earth-doped
GaN electroluminescent devices (ELDs). GaN: RE ELDs emit light due to impact excitation of …

Monolithic and phosphor-free light-emitting diodes (LEDs) have been fabricated based on
vertically integrated Ga 2 O 3: Tm, Ga 2 O 3: Eu, and Ga 2 O 3: Er films by alternate-target …

We have realized full color integration on rare-earth-doped thin-film electroluminescent EL
GaN using lateral integration. Tm, Er, and Eu dopants were in situ doped into GaN thin films …

Yellow color from vertically integrated light emitting device (LED) was reported. The
multilayer structured Er and Eu doped Ga 2 O 3 films were deposited on sapphire and GaAs …

The crystallographic nature of the damage created in GaN by 300 keV rare earth ions has
been investigated following implantation at room temperature by varying the fluence of Er …

A detailed investigation of the crystallographic damage has been carried out in GaN
following 300 keV rare earth ion implantation at room temperature by varying the fluence …

We report on the transformation from broadband to monochromatic orange-red emission for
the electroluminescence (EL) from the metal-oxide-semiconductor (MOS) devices with …

We have investigated the electrical and optical properties of erbium (Er 3+) doped TiO 2 thin
films (Er: TiO 2 TFs) grown by sol–gel technique on glass and silicon substrates. The …

In current research, we investigate optical properties of Gd doped zincblende GaN using
Wien2K code, by employing DFT+ U. We consider pure GaN and we dope various Gd …