Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
SS Kohneh Poushi, B Goll, K Schneider-Hornstein… - Sensors, 2023 - mdpi.com
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …
A near-infrared enhanced field-line crowding based CMOS-integrated avalanche photodiode
SSK Poushi, C Gasser, B Goll, M Hofbauer… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
This paper presents a CMOS-integrated linear-mode avalanche photodiode based on
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …
A BiCMOS Active Quencher Using an Inverter Based Differential Amplifier in the Comparator
B Goll, M Hofbauer… - IEEE Solid-State Circuits …, 2023 - ieeexplore.ieee.org
For fast switching off of a firing single-photon avalanche diode (SPAD), an active quenching
circuit in 0.35-BiCMOS technology with a very fast quenching slew rate is introduced …
circuit in 0.35-BiCMOS technology with a very fast quenching slew rate is introduced …
A novel design of a silicon PIN diode for increasing the breakdown voltage
F Rezaei, F Dehghan Nayeri… - IET Circuits, Devices & …, 2022 - Wiley Online Library
This paper presents a new structure consisting of a silicon PIN junction with high breakdown
voltage and low dark current with two Guard rings. To achieve the optimal structure, the …
voltage and low dark current with two Guard rings. To achieve the optimal structure, the …
Electrical Characterization of CMOS 1µ Twin Well Technology Based Designed Diodes
This work reports an experimental investigation containing the elaboration and electrical
characterization phases of different diodes. The elaborated samples, based on CMOS 1 µm …
characterization phases of different diodes. The elaborated samples, based on CMOS 1 µm …
Electrical Characterization of CMOS 1μ Twin Well Technology Based Designed
This work reports an experimental investigation containing the elaboration and electrical
characterization phases of different diodes. The elaborated samples, based on CMOS 1 µm …
characterization phases of different diodes. The elaborated samples, based on CMOS 1 µm …