The characteristics of a damaged layer of p-Cd x Hg 1− x Te/CdZnTe (x∼ 0.223)
heterostructures after implantation by 100-keV silver ions with the implantation dose Q= 3.0× …

Ultra-shallow junctions were formed by low-energy As ion implantation followed by furnace
annealing. It was found that a significant amount of oxygen is redistributed from the silicon …

Compositionally graded AlxGa1–xN alloys with the Al concentration in the (7≤ x≤ 32)
range were implanted with Ar+ ions to study the structural and strain changes (strain …

The mechanisms of oxygen precipitation in the SiO 2 phase during rapid thermal annealing
of solar-grade Cz-Si wafers at moderate temperature (850 C) are analysed. A theoretical …

The effect of beryllium doping on defect structure of the 1.5 μm thick GaAs: Be films grown by
MBE on GaAs substrate as well as the effect of high temperature–high pressure treatment …

Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction
are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a …

The microstructural and morphological properties of homoepitaxial (001) ZnTe layers grown
by metalorganic vapor phase epitaxy at a temperature (TG) between 325 C and 400 C are …

Методами высокоразрешающей рентгеновской дифрактометрии проведены
исследования многослойных структур в системе Inx Ga1− x N/GaN, выращенных …

A comparative study of the defect formation and changes in the lifetime of nonequilibrium
minority charge carriers in silicon while gettering the iron impurity with the use of a combined …

High resolution X-ray diffraction (HRXRD), Raman scattering (RS), and photoluminescence
(PL) methods have been used to study the influence of Si1− xGex buffer layer parameters on …