The purpose of this article is to provide an overview of the surface structures of the clean
surfaces of tetrahedrally coordinated semiconductors within the context of identifying the …

This paper reviews the recent experimental findings on the atomic structures on the (001)
surface of GaAs. We systematically studied the structure and composition of the GaAs (001) …

Surface energies for different GaAs surface orientations have been calculated as a function
of the chemical potential. We use an energy density formalism within the first-principles …

Using density-functional theory we identify a new low-energy structure for GaAs (001) in an
As-poor environment. The discovered geometry is qualitatively different from the usual …

While the (001) oriented substrate of compound semiconductors are most commonly used in
fabrication of wireless and opto-electronic devices by molecular beam epitaxy, metallorganic …

There has been renewed interest in the structure of III-V compound semiconductor (001)
surfaces caused by recent experimental and theoretical findings, which indicate that …

Total-energy calculations for a series of (2× 4) and (4× 2) reconstructed GaAs (001) surfaces
not included in previous theoretical studies are presented. A (2× 4) surface model containing …

While GaAs (001) is the most commonly used substrate in fabrication of wireless and opto-
electronic devices based on III–V compound semiconductors by molecular beam epitaxy …

The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been
under intense debate for many years, yet none of the models agrees with the experimental …

On the basis of a low energy electron diffraction I− V structural investigation, the surface
geometry of the Rh 100+ 2× 2− 2 O phase has been determined. The oxygen is found to …