Electronic transport properties of HgMnTe n+–p junctions
LA Kosyachenko, SE Ostapov, AV Markov… - Infrared physics & …, 2003 - Elsevier
Transport properties of Hg1xMnxTe photodiodes for 8–14 μm spectral region are
investigated. It is shown that the distributions of space charge density, electric field strength …
investigated. It is shown that the distributions of space charge density, electric field strength …
[PDF][PDF] Методы измерения вольт-амперных характеристик фотодиодов в многорядном ИК-фотоприемнике
Л Балиев, КО Болтарь - Прикладная физика, 2016 - applphys.orion-ir.ru
Результаты измерения вольт-амперных характеристик (ВАХ) ИК-фотодиодов
позволяют получить основную информацию об их качестве [1]. Традиционные методы …
позволяют получить основную информацию об их качестве [1]. Традиционные методы …
Electrical properties of HgMnTe Schottky diodes
LA Kosyachenko, SE Ostapov… - … on Material Science …, 2003 - spiedigitallibrary.org
The electrical properties of Al-Hg 1-x Mn x Te (x= 0.08-0.1) Schottky barriers are
investigated. The main parameters of the diode structure and charge transport mechanisms …
investigated. The main parameters of the diode structure and charge transport mechanisms …
Infrared detector materials alternative to CdHgTe
IM Nesmelova, VA Andreev - Journal of Optical Technology, 2007 - opg.optica.org
This paper reviews the electrophysical properties of materials that possess more stable time
and temperature parameters than does the ternary solid solution CdHgTe. The main …
and temperature parameters than does the ternary solid solution CdHgTe. The main …
Electrical properties of narrow-gap HgMnTe Schottky diodes
LA Kosyachenko, AV Markov, SE Ostapov, IM Rarenko… - Semiconductors, 2002 - Springer
The electrical properties of Al/Hg 1− x Mn x Te (x= 0.08–0.1) Schottky barriers have been
studied. Specific features related to a narrow band gap and to a strong difference between …
studied. Specific features related to a narrow band gap and to a strong difference between …