Theoretical study and design of n-ZnO/p-Si heterojunction MSM photodiode for optimized performance

N Al-Khalli, M Aboud, N Debbar - Optics & Laser Technology, 2021 - Elsevier
The effects of using p-Si as a substrate on the performance of a thin-film ZnO-based metal–
semiconductor–metal photodetector were examined theoretically via a two-dimensional …

Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing

Q Shu, R Wang, J Yang, M Zhang, T Zeng… - …, 2018 - iopscience.iop.org
A series of zero-dimensional Ge/Si quantum dots (QDs) samples are fabricated by inducing
the transformation from the two-dimensional Ge thin film, which is grown by the traditional …

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

N Debbar - … Modelling: Electronic Networks, Devices and Fields, 2016 - Wiley Online Library
We present a numerical characterization of a high‐speed high‐responsivity GaAs lateral
Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of …

Performance enhancement of ZnO‐based MSM photodiodes by optimizing structure parameters

N Al‐Khalli, N Debbar - International Journal of Numerical …, 2019 - Wiley Online Library
A two‐dimensional numerical simulation based on the drift‐diffusion model has been used
to study the influence of the structural parameters on the ZnO‐based thin film metal …

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD's Performance

N Al-Khalli, M Aboud, N Debbar - IEEE Access, 2019 - ieeexplore.ieee.org
The active layer material quality and doping profile effects on the ZnO-based thin film metal-
semiconductor-metal photodiode's (MSM-PD) performance are studied using a 2-D …