Conduction-band offset in a pseudomorphic quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy …
L Lu, J Wang, Y Wang, W Ge, G Yang… - Journal of applied …, 1998 - pubs.aip.org
The conduction-band offset ΔE C has been determined for a molecular beam epitaxy grown
GaAs/In 0.2 Ga 0.8 As single quantum-well structure, by measuring the capacitance–voltage …
GaAs/In 0.2 Ga 0.8 As single quantum-well structure, by measuring the capacitance–voltage …
Intrasubband and intersubband transitions in lightly and heavily doped multiple quantum wells
QS Zhu, XB Wang, ZT Zhong, XC Zhou, YP He, ZP Cao… - Physical Review B, 1998 - APS
We use a polarizer to investigate quantum-well infrared absorption, and report experimental
results as follows. The intrasubband transition was observed in G a A s/A lx Ga 1− x As …
results as follows. The intrasubband transition was observed in G a A s/A lx Ga 1− x As …
Determination of the sub‐band energy in the V‐shaped potential well of δ‐doped GaAs by deep level transient spectroscopy
QS Zhu, ZT Zhong, LW Lu, CF Li - Applied physics letters, 1994 - pubs.aip.org
Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a
V-shaped potential well induced by Si-δ doping in GaAs were determined. Self-consistent …
V-shaped potential well induced by Si-δ doping in GaAs were determined. Self-consistent …
Determination of the X conduction‐subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy
QS Zhu, ZQ Gu, ZT Zhong, ZQ Zhou, LW Lu - Applied physics letters, 1995 - pubs.aip.org
Using deep level transient spectroscopy DLTS the X conduction-subband energy levels in
an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight …
an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight …
Intrinsic and extrinsic radiative recombination processes in GaAsGaInP quantum wells
H Mejri, S Alaya, H Maaref, JC Bourgoin, J Barrau… - Journal of …, 1995 - Elsevier
Intrinsic and extrinsic photoluminescence (PL) transitions originating from wells and barriers
have been observed in both undoped and Si-doped GaAs Ga 0.52 In 0.48 P quantum well …
have been observed in both undoped and Si-doped GaAs Ga 0.52 In 0.48 P quantum well …
[PDF][PDF] HIGH TEMPERATURE OPERATION (185'C) OF InGaAdGaAdInGaP QUANTUM WELL LASERS
ABSTRACT Aluminum-free InGaAs/GaAs/InGaP strainedlayer quantum-well lasers are
grown on GaAs substrates by gas-source MBE for the first time. High temperature cw …
grown on GaAs substrates by gas-source MBE for the first time. High temperature cw …
High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers
Aluminium-free InGaAs/GaAs/InGaP strained-layer quantum-well lasers have been grown
on GaAs substrates by gas-source MBE (molecular beam epitaxy). High-temperature CW …
on GaAs substrates by gas-source MBE (molecular beam epitaxy). High-temperature CW …
The Study of TiWN Schottky Contacts on n-Ga0.51In0.49P
EY Chang, YL Lai, KC Lin, CY Chang… - MRS Online Proceedings …, 1993 - Springer
The first study of the TiW nitrides (TiWN X) as the Schottky contact metals to the n type Ga
0.51 In 0.49 P has made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on …
0.51 In 0.49 P has made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on …