Strained germanium thin film membrane on silicon substrate for optoelectronics
This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …
[PDF][PDF] High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process
Monolithic integration of optical components on an Si platform has been pursued for a long
time for its potential advantages over hybrid approaches: lower assembly cost …
time for its potential advantages over hybrid approaches: lower assembly cost …
A breakdown voltage multiplier for high voltage swing drivers
S Mandegaran, A Hajimiri - IEEE Journal of Solid-State Circuits, 2007 - ieeexplore.ieee.org
A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate
high output voltage swings using transistors with low breakdown voltages. The timing …
high output voltage swings using transistors with low breakdown voltages. The timing …
Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals
Efficient room-temperature luminescence at optical telecommunication wavelengths and
originating from direct band-to-band recombination has been observed in tensile-strained …
originating from direct band-to-band recombination has been observed in tensile-strained …
Atomic scale formation mechanism of edge dislocation relieving lattice strain in a GeSi overlayer on Si (001)
Understanding how edge misfit dislocations (MDs) form in a GeSi/Si (001) film has been a
long standing issue. The challenge is to find a mechanism accounting for the presence of …
long standing issue. The challenge is to find a mechanism accounting for the presence of …
Optoelectronic measurement of the transfer function and time response of a 70 GHz sampling oscilloscope
The transfer characteristics of a nominal 70 GHz sampling oscilloscope are measured using
time-domain optoelectronic techniques. It is shown that the optoelectronic measurement set …
time-domain optoelectronic techniques. It is shown that the optoelectronic measurement set …
Integrated circuit with breakdown voltage multiplier
S Mandegaran, SA Hajimiri - US Patent 7,321,242, 2008 - Google Patents
An apparatus and method for driving an output signal in a high speed integrated circuit. The
apparatus and methods enable the output voltage swing from the driver to exceed the …
apparatus and methods enable the output voltage swing from the driver to exceed the …
Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition
YB Bolkhovityanov, AK Gutakovskii, AS Deryabin… - Semiconductors, 2008 - Springer
GeSi/Si heterostructures consisting of a plastically relaxed layer that includes various
fractions of Ge and which is grown on Si (001) span the values of the lattice parameter from …
fractions of Ge and which is grown on Si (001) span the values of the lattice parameter from …
[PDF][PDF] Возможности и основные принципы управления пластической релаксацией пленок GeSi/Si и Ge/Si ступенчатого изменяемого состава
ЮБ Болховитянов, АК Гуматовский… - Физика и техника …, 2008 - journals.ioffe.ru
Для создания электронных приборов, использующих полупроводниковые материалы,
технологии эпитаксиального наращивания которых достаточно хорошо отработана …
технологии эпитаксиального наращивания которых достаточно хорошо отработана …
A breakdown voltage doubler for high voltage swing drivers
S Mandegaran, A Hajimiri - … of the IEEE 2004 Custom Integrated …, 2004 - ieeexplore.ieee.org
A novel breakdown voltage (BV) doubler is introduced that makes it possible to generate
high output voltage swings using transistors with low breakdown voltages. The timing …
high output voltage swings using transistors with low breakdown voltages. The timing …