Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Promises and prospects of two-dimensional transistors
Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …
atomically thin channels that could facilitate continued transistor scaling. However, despite …
Approaching the quantum limit in two-dimensional semiconductor contacts
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
Ultralow contact resistance between semimetal and monolayer semiconductors
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …
metal dichalcogenides provide an ideal material platform, but the device performances such …
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …
Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides
The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …
Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for
integrated flexible electronics due to its excellent mechanical, optical and electronic …
integrated flexible electronics due to its excellent mechanical, optical and electronic …
Making clean electrical contacts on 2D transition metal dichalcogenides
Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …
emerged as highly promising for new electronic technologies. However, a key challenge in …
Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …