Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon
Z Yan, Q Li - Journal of Physics D: Applied Physics, 2024 - iopscience.iop.org
Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement
current Si photonics, facilitating the development of scalable, compact photonic integrated …
current Si photonics, facilitating the development of scalable, compact photonic integrated …
Design of high power evanescent quantum dot distributed feedback lasers on Si
Q Ge, J Wang, S Liu, H Liu, H Zhai, F Lin, Y Chen… - Physica …, 2024 - iopscience.iop.org
Great advancements in III–V/Si epitaxy have pushed quantum dot lasers to the forefront of
silicon photonics. In this work, we designed the structures of evanescent coupled quantum …
silicon photonics. In this work, we designed the structures of evanescent coupled quantum …
Growth of Group IV and III-V Semiconductor Materials for Silicon Photonics: Buffer Layer and Light Source Development
H Jia - 2023 - discovery.ucl.ac.uk
High data transmission speeds, high levels of integration, and low manufacturing costs have
established Si photonics as a crucial technology for next-generation data interconnects and …
established Si photonics as a crucial technology for next-generation data interconnects and …