Resistive switching materials for information processing
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
Understanding memristive switching via in situ characterization and device modeling
Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …
unconventional computing, memristive devices have drawn substantial research attention in …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
In-memory learning with analog resistive switching memory: A review and perspective
In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …
their hardware technologies for in-memory learning, as well as their challenges and …
Two-Terminal MoS2 Memristor and the Homogeneous Integration with a MoS2 Transistor for Neural Networks
Memristors are promising candidates for constructing neural networks. However, their
dissimilar working mechanism to that of the addressing transistors can result in a scaling …
dissimilar working mechanism to that of the addressing transistors can result in a scaling …
A large-scale empirical study on self-admitted technical debt
Technical debt is a metaphor introduced by Cunningham to indicate" not quite right code
which we postpone making it right". Examples of technical debt are code smells and bug …
which we postpone making it right". Examples of technical debt are code smells and bug …
Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile
resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin …
resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin …
Balancing SET/RESET Pulse for Endurance in 1T1R Bipolar RRAM
By tuning the SET/RESET pulse amplitude conditions, the pulse endurance of our 40-nm
HfO 2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure …
HfO 2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure …
Atomic-scale fatigue mechanism of ferroelectric tunnel junctions
Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation memories
due to fast read/write speeds and low-power consumptions. Here, we investigate resistance …
due to fast read/write speeds and low-power consumptions. Here, we investigate resistance …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …