The possibility of tuning the Dzyaloshinskii-Moriya interaction (DMI) by electric (E)-field
gating in ultrathin magnetic materials has opened up new perspectives in terms of …

Space applications, nuclear physics, military operations, medical imaging, and especially
electronics (modern silicon processing) are obvious fields in which radiation damage can …

We used density functional theory (DFT) calculations to study the interaction of hydrogen
with amorphous hafnia (a-HfO 2) using a hybrid exchange-correlation functional. Injection of …

The Al 2 O 3/GaAs and HfO 2/GaAs interfaces after atomic layer deposition are studied using
in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed …

Thin films of hafnium oxide were deposited by electron beam evaporation, and were
subsequently annealed in hydrogen. X-ray diffraction, X-ray photoelectron spectroscopy …

Density functional theory (DFT) has been used to study the hydrolysis reaction of (MO2) n
(M= Zr, Hf, n= 1–4) nanoclusters in the ground singlet and first triplet states. The reactions for …

Charge trapping characteristics are investigated for MOS capacitors with 6.8 nm HfO 2
layers and 1.0 nm interfacial silicon oxynitrides; the effective oxide thickness of the high …

Si/SiO 2 interface trap charge distribution of cylindrical cross-sectioned gate-all-around
silicon nanowire field-effect transistor is extracted by using three-dimensional simulation …

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor
(finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring …

The chemical bonding of O atoms in HfO 2 films on Si was investigated by in situ x-ray
photoelectron spectroscopy in the O 1 s spectral region. In addition to trivial O forming only O …