LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond
S Chen, Y Ning, CS Tang, L Dai, S Zeng… - Advanced Electronic …, 2024 - Wiley Online Library
This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …
Post-annealing optimization of the heteroepitaxial La-doped SrSnO 3 integrated on silicon via ALD
Wide band gap (WBG) alkaline-earth stannate transparent oxide semiconductors (TOSs)
have attracted increasing attention in recent years for their high carrier mobility and …
have attracted increasing attention in recent years for their high carrier mobility and …
Oxide‐based optoelectronics
Integrated Si photonics has the potential to revolutionize the processing of information
between different integrated chips, as well as within a single chip itself. By performing at …
between different integrated chips, as well as within a single chip itself. By performing at …
Designing near-infrared electro-optical devices from the SrTiO3/LaAlO3 materials system
JE Ortmann, MA Duncan, AA Demkov - Optical Materials Express, 2019 - opg.optica.org
While the SrTiO_3/LaAlO_3 materials system has garnered intense research interest over
the past decade owing to the discovery of a two-dimensional electron gas at the interface of …
the past decade owing to the discovery of a two-dimensional electron gas at the interface of …
Three-dimensional integration of functional oxides and crystalline silicon for optical neuromorphic computing using nanometer-scale oxygen scavenging barriers
Dating to the first reports of epitaxial oxide deposition on Si (001), the integration of complex
oxides on silicon has been a fast-moving area of research, where fundamental materials …
oxides on silicon has been a fast-moving area of research, where fundamental materials …
Epitaxial oxides on glass: a platform for integrated oxide devices
The fabrication of epitaxial, ultrathin SrTiO3 (STO) on thick SiO2 without the need for
complicated wafer-bonding processes has been demonstrated. The resulting transition …
complicated wafer-bonding processes has been demonstrated. The resulting transition …
LaAlO₃/SrTiO₃ heterointerface: 20 years and beyond
S Chen, Y Ning, CS Tang, L Dai, S Zeng… - Advanced electronic …, 2024 - ira.lib.polyu.edu.hk
This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …
Tunable giant nonlinear optical susceptibility in quantum wells
We investigate theoretically the giant nonlinear optical susceptibilities based on
intersubband transitions in the n-type BaSnO 3 quantum well heterostructures. Validity of the …
intersubband transitions in the n-type BaSnO 3 quantum well heterostructures. Validity of the …
[HTML][HTML] Role of point and line defects on the electronic structure of LaAlO3/SrTiO3 interfaces
Realization of heterostructures containing multiple two-dimensional electron liquids requires
a fine control of the fabrication process. Here, we report a structural and spectroscopy study …
a fine control of the fabrication process. Here, we report a structural and spectroscopy study …
[PDF][PDF] Heterointerface: 20 Years and Beyond
S Chen, Y Ning, CS Tang, L Dai, S Zeng, K Han… - 2023 - researchgate.net
This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …