Optimal process parameters for phosphorus spin-on-doping of germanium

V Boldrini, SM Carturan, G Maggioni, E Napolitani… - Applied Surface …, 2017 - Elsevier
The fabrication of homogeneously doped germanium layers characterized by total electrical
activation is currently a hot topic in many fields, such as microelectronics, photovoltaics …

Photocurrent mapping in high-efficiency radial p–n junction silicon nanowire solar cells using atomic force microscopy

JS Hwang, MC Kao, JM Shiu, CN Fan… - The Journal of …, 2011 - ACS Publications
Rapid formation of radial p–n junctions on electroless-etched silicon nanowires (SiNWs)
was successfully demonstrated. With a low-cost objective, a homemade nonhazardous …

Making silicon solar cells in a green, low-hazardous, and inexpensive way

JS Hwang, CY Wu, YH Tai, P Tseng, S Chattopadhyay… - Rsc Advances, 2015 - pubs.rsc.org
A facile, green, and low-cost process for fabricating silicon solar cells safely at home or in
school is presented. In the process, we not only prepare a H3PO4-based nontoxic spin-on …

Poly-Si passivating contacts formed via spin-on doping for c-Si solar cells

Z Ding - 2021 - search.proquest.com
With the constant improvement of crystalline silicon solar cells over the last decades, the
carrier recombination and transportation at the contacts have become limiting factors to …

Microstructural and electrical characterization of Si/4H-SiC heterojunction diodes

F Triendl - 2021 - repositum.tuwien.at
With the growing demand for high power, highly efficient, and fast switching power
electronics, silicon carbide (SiC) is besides gallium nitride (GaN) the substrate material of …

Development and analysis of n-type doping processes for High Purity Germanium

V Boldrini - 2018 - research.unipd.it
After a period of low interest, in the last two decades germanium has become one of the
most studied semiconductors and now it is applied in many research fields such as …