This paper reports the studies of the inversion layer mobility in n-and p-channel Si
MOSFET's with a wide range of substrate impurity concentrations (10/sup 15/to 10/sup …

A new, comprehensive, physically-based, semiempirical, local model for transverse-field
dependent electron and hole mobility in MOS transistors is presented. In order to accurately …

A new method for dramatically lowering the Schottky barrier resistance at a metal/Si
interface by interposing an ultrathin insulator is demonstrated for the first time, with …

MOS surface mobility is a fundamental material and device property which has been
extensively studied both theoretically and experimentally. This work reports on a new …

Hall-effect measurements of n-channel MOS devices were used to determine the main
scattering mechanisms limiting mobility in SiC MOSFETs. MOS-gated Hall characterization …

This book examines the matching properties of deep sub-micron MOS transistors.
Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of …

Carrier mobility is one of the most important parameters affecting the IV characteristics of
MOSFETs. Hence, accurate mobility models that account for all the important scattering …

An energy parameterized pseudo-lucky electron model for simulation of gate current in
submicron MOSFET's is presented in this paper. The model uses hydrodynamic equations to …

This review focuses on the evolution of a low‐temperature remote plasma‐assisted
deposition process that has yielded device‐quality SiO2 and SiO2‐Si3N4 alloy thin films as …

Based on a numerical study of Ando's model for surface roughness scattering, we assess
the links between the functional dependencies of the electron surface roughness-limited …