A review of switching oscillations of wide bandgap semiconductor devices
J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …
high power density to power converters due to their excellent performance. However, their …
Review on driving circuits for wide-bandgap semiconductor switching devices for mid-to high-power applications
CT Ma, ZH Gu - Micromachines, 2021 - mdpi.com
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …
飞机电推进系统高效能电机及其驱动控制技术
张卓然， 陆嘉伟， 张伟秋， 高华敏， 薛涵 - 中国电机工程学报, 2023 - epjournal.csee.org.cn
飞机动力系统的电气化是继机载二次能源逐步统一为电能之后航空电气化发展的重要方向和
高级阶段, 能够大幅提升飞机动力系统能量利用效率, 是航空业绿色发展的重要途径 …
高级阶段, 能够大幅提升飞机动力系统能量利用效率, 是航空业绿色发展的重要途径 …
Performance improvement strategies for discrete wide bandgap devices: A systematic review
M Tahir, S Hu, X He - Frontiers in Energy Research, 2021 - frontiersin.org
Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent
material properties. WBG devices are commercially available in discrete and module …
material properties. WBG devices are commercially available in discrete and module …
Mitigating Uncertainty Problems of Renewable Energy Resources Through Efficient Integration of Hybrid Solar PV/Wind Systems Into Power Networks
MMR Ahmed, S Mirsaeidi, MA Koondhar… - IEEE …, 2024 - ieeexplore.ieee.org
In recent years, there has been a proliferation of studies focusing on sustainable energy
sources aimed at delivering reliable power with reduced greenhouse gas emissions. Among …
sources aimed at delivering reliable power with reduced greenhouse gas emissions. Among …
Split-output hybrid active neutral-point-clamped converter for MV applications
The higher cost of silicon carbide (SiC) devices is a limiting factor for their utilization in
power electronic applications. This has led to the development of hybrid topologies by …
power electronic applications. This has led to the development of hybrid topologies by …
A four-level active gate driver with continuously adjustable intermediate gate voltages
The dv/dt and di/dt during switching transients are increased dramatically due to the very fast
switching speed of silicon carbide (SiC) MOSFET, which are the major sources for the …
switching speed of silicon carbide (SiC) MOSFET, which are the major sources for the …
A universal block of series-connected SiC MOSFETs using current-source gate driver
SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and
temperature characteristics. In order to significantly improve the efficiency and power density …
temperature characteristics. In order to significantly improve the efficiency and power density …
Active gate drive with gate–drain discharge compensation for voltage balancing in series-connected SiC MOSFETs
Y Zhou, X Wang, L Xian, D Yang - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected
silicon carbide (SiC) MOSFET application. This article first discusses the influence of the …
silicon carbide (SiC) MOSFET application. This article first discusses the influence of the …
An integrated gate driver based on SiC MOSFETs adaptive multi-level control technique
J Cao, ZK Zhou, Y Shi, B Zhang - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
In HV (high-voltage) and HF (high-frequency) applications, SiC (silicon carbide) MOSFET is
widely used for its small parasitic characteristics and fast switching speed. Using discrete …
widely used for its small parasitic characteristics and fast switching speed. Using discrete …