Review on the reliability mechanisms of SiC power MOSFETs: A comparison between planar-gate and trench-gate structures

J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun… - … on Power Electronics, 2023 - ieeexplore.ieee.org
To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

M Cioni, N Zagni, F Iucolano… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Dynamic dispersion due to buffer traps is a well-known issue of GaN power high electron
mobility transistors (HEMTs), critically impacting their performance and stability. Several …

(Ultra) wide-bandgap semiconductors for electric vehicles

G Gupta, E Ahmadi - MRS Bulletin, 2024 - Springer
The power electronics charging the battery or driving the motor is often the limiting factor for
cost and efficiency. In the race for lowering electric vehicle (EV) costs and enabling …

Design and Comparative Analysis of an Ultra-Highly Efficient, Compact Half-Bridge LLC Resonant GaN Converter for Low-Power Applications

M Faizan, X Wang, MZ Yousaf - Electronics, 2023 - mdpi.com
For low-power applications, this paper presents the development and design of a compact
and ultra-highly efficient half-bridge LLC resonant converter. By using Galium Nitride (GaN) …

Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs

N Zagni, M Cioni, F Iucolano, M Moschetti… - Semiconductor …, 2021 - iopscience.iop.org
In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on the dynamic R
ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the …

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

H Khalid, S Mekhilef, MD Siddique, A Wahyudie… - Plos one, 2023 - journals.plos.org
Most silicon carbide (SiC) MOSFET models are application-specific. These are already
defined by the manufacturers and their parameters are mostly partially accessible due to …

Comparison of AC and DC BTI in SiC power MOSFETs

AK Ghosh, OO Awadelkarim, J Hao… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
In this work we compared AC and DC bias temperature instability (BTI) degradations
induced by stressing the channel and Junction-FET regions in 4H polytype n-channel …

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs

M Cioni, G Giorgino, A Chini, C Miccoli… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
The effect of the GaN buffer doping on V TH drift and dynamic-R ON of 100 V p-GaN gate
AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different Carbon (C) …

Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs

M Cioni, G Giorgino, A Chini, A Parisi… - … on Electrical and …, 2023 - ieeexplore.ieee.org
The impact of gate and drain leakage on V TH drift and dynamic-R ON of 100 V p-GaN gate
AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN …

[HTML][HTML] Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs

M Cioni, G Giorgino, A Chini, A Parisi, G Cappellini… - Electronic …, 2024 - mdpi.com
In this paper, a new method for evaluating hot-electron degradation in p-GaN gate
AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter …